text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STQ1NK80ZR-AP

STMicroelectronics | STQ1NK80ZR-AP

Manufacturer Part #

STQ1NK80ZR-AP

N-Channel 1.6 V 365 ns ZENER Protected SuperMESH Mosfet Through Hole - TO-92

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STQ1NK80ZR-AP - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 16Ω
Rated Power Dissipation: 3|W
Qg Gate Charge: 7.7nC
Package Style:  TO-92
Mounting Method: Through Hole
Features & Applications

The STQ1NK80ZR-AP is a N-Channel Zener-Protected SuperMESH™ MOSFET.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. It is available in a TO-92 package.

Features:

  • Typical RDS(on) = 13 Ω
  • Extremely high dv/dt capability
  • ESD improved capability
  • 100% avalanche tested
  • New high voltage benchmark
  • Gate charge minimized
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
2000
Total
$1,340.00
USD
Quantity
Unit Price
2,000
$0.34
4,000
$0.335
10,000
$0.33
20,000+
$0.325
Product Variant Information section