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Référence fabricant

MJD210G

MJD Series 25 V 5 A Tab Mount PNP Complementary Plastic Power TransistorTO-252-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2351
Product Specification Section
onsemi MJD210G - Caractéristiques techniques
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 25V
Collector Current Max: 5A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 70
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Tab Mount
Fonctionnalités et applications

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Features:

  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain - hFE
    • = 70 (Min) @ IC = 500 mAdc
    • = 45 (Min) @ IC = 2 Adc
    • = 10 (Min) @ IC = 5 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -VCE(sat)
    • = 0.3 Vdc (Max) @ I C = 500 mAdc
    • = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

Learn more about the MJD family of Bipolar Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
24 Semaines
Commande minimale :
3225
Multiples de :
75
Total 
661,13 $
USD
Quantité
Prix unitaire
75
$0.22
300
$0.215
1 125
$0.21
2 250
$0.205
5 625+
$0.20
Product Variant Information section