onsemi | MJD210G

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Features:

• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE
• = 70 (Min) @ IC = 500 mAdc
• = 45 (Min) @ IC = 2 Adc
• = 10 (Min) @ IC = 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("-1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low Collector-Emitter Saturation Voltage -VCE(sat)
• = 0.3 Vdc (Max) @ I C = 500 mAdc
• = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available

Learn more about the MJD family of Bipolar Transistors