text.skipToContent text.skipToNavigation

Manufacturer Part #

MUN5211DW1T1G

MUN5211DW1 Series 2 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2436
Product Specification Section
onsemi MUN5211DW1T1G - Technical Attributes
Attributes Table
Polarity: NPN-Pre-Biased
R1, R2: 10kΩ/10kΩ
Collector Current Max: 100mA
Output Current-Max: 100mA
CE Voltage-Max: 50V
Supply Voltage: 2V
Power Dissipation-Tot: 385mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 0.25V
DC Current Gain-Min: 35
Configuration: Dual
Collector - Current Cutoff: 100nA
Operating Temp Range: -55°C to +150°C
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The MUN5211DW1T1G is a Low power NPN Silicon Surface Mount Transistors with Dual Monolithic Bias Resistor Network; designed to replace a single device and it's external resistor bias network.

It's monolithic bias network consisting of two resistors which eliminates these individual components by integrating them in to a single device.

Features:

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • AEC−Q101 Qualified and PPAP Capable
  • Pb−Free Packages are Available

Applications:

  • Supply line switches
  • Battery charger switches
  • High-side switches for LEDs, drivers and backlights
  • Portable equipment
Pricing Section
Global Stock:
537,000
USA:
537,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$65.40
USD
Quantity
Unit Price
3,000
$0.0218
9,000
$0.0218
15,000
$0.0218
45,000
$0.0218
75,000+
$0.0218