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  6. DF900R12IP4DBOSA1

Infineon | DF900R12IP4DBOSA1

Manufacturer Part #

DF900R12IP4DBOSA1

DF900R12IP4D Series 1200 V 900 A Chassis Mount IGBT Module

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon DF900R12IP4DBOSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Power Dissipation-Tot: 5.1kW
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 1800A
Collector - Emitter Saturation Voltage: 1.7V
Turn-on Delay Time: 0.2µs
Turn-off Delay Time: 0.7µs
Qg Gate Charge: 6400nC
Leakage Current: 400nA
Input Capacitance: 54nF
Operating Temp Range: -40°C to +150°C
No of Terminals: 10
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3
Multiple Of:
3
Total
$1,290.72
USD
Quantity
Unit Price
3
$430.24
6
$425.98
9
$423.51
12
$421.76
15+
$416.26
Product Variant Information section