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Manufacturer Part #

STGB20NB41LZT4

N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1741
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 442V
Collector Current @ 25C: 40A
Power Dissipation-Tot: 200W
Gate - Emitter Voltage: 12V to 16V
Pulsed Collector Current: 80A
Collector - Emitter Saturation Voltage: 1.3V
Turn-on Delay Time: 1µs
Turn-off Delay Time: 12.1µs
Qg Gate Charge: 46nC
Leakage Current: 660µA
Input Capacitance: 2300pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STGB20NB4ILZT4 is Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

Features:

  • Polysilicon Gate Voltage Driven
  • Low Threshold Voltage
  • Low ON-Voltage drop
  • Low Gate Charge
  • High current capability
  • High voltage clamping feature

Applications:

  • Automotive Ignition
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$2,130.00
USD
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Quantity
Web Price
1,000+
$2.13
Product Variant Information section