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STMicroelectronics | STGW40H65DFB

Manufacturer Part #

STGW40H65DFB

HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STGW40H65DFB - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 283W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 160A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 40ns
Turn-off Delay Time: 142ns
Qg Gate Charge: 210nC
Reverse Recovery Time-Max: 62ns
Leakage Current: 250nA
Input Capacitance: 5412pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$774.00
USD
Quantity
Unit Price
30
$1.33
150
$1.31
600
$1.29
1,500
$1.27
3,750+
$1.25
Product Variant Information section