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Manufacturer Part #

AFT09MS015NT1

AFT09MSx Series 40 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP AFT09MS015NT1 - Technical Attributes
Attributes Table
Fet Type: RF Fet
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Rated Power Dissipation: 125W
Gate-Source Voltage-Max [Vgss]: 12V
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 74pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
1,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2000
Multiple Of:
1000
Total
$7,680.00
USD
Quantity
Web Price
1,000+
$3.84
Product Variant Information section