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Infineon | BSB028N06NN3GXUMA2

Manufacturer Part #

BSB028N06NN3GXUMA2

Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS Power Mosfet - MG-WDSON-2

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSB028N06NN3GXUMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 2.2W
Qg Gate Charge: 143nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 22A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 38ns
Rise Time: 9ns
Fall Time: 6ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 8800pF
Package Style:  MG‑WDSON‑5
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
648,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$6,528.00
USD
Quantity
Unit Price
4,800+
$1.36
Product Variant Information section