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Diodes Incorporated | DMG1012T-13

Manufacturer Part #

DMG1012T-13

MOSFET 20V N-Ch Enhance Mode MOSFET

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG1012T-13 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 280mW
Qg Gate Charge: 736.6pC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: 0.63A
Turn-on Delay Time: 5.1ns
Turn-off Delay Time: 26.7ns
Rise Time: 7.4ns
Fall Time: 12.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 60.67pF
Package Style:  SOT-523
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Semaines
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$319.00
USD
Quantity
Unit Price
10,000
$0.0319
30,000
$0.0312
50,000
$0.0308
100,000
$0.0304
200,000+
$0.0297
Product Variant Information section