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Diodes Incorporated | DMN6075S-7

Manufacturer Part #

DMN6075S-7

Single N-Channel 60 V 120 mOhm 12.3 nC 0.8 W Silicon Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2320
Product Specification Section
Diodes Incorporated DMN6075S-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 120MΩ
Rated Power Dissipation: 0.8W
Qg Gate Charge: 12.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 35ns
Rise Time: 4.1ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1mm
Length: 3mm
Input Capacitance: 606pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
90,000
USA:
90,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$192.60
USD
Quantity
Unit Price
3,000
$0.0642
9,000
$0.0626
15,000
$0.0619
60,000
$0.0601
90,000+
$0.0589
Product Variant Information section