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Diodes Incorporated | DMN65D8LDWQ-7

Manufacturer Part #

DMN65D8LDWQ-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - 60V SOT363 AECQ10 AUALIFIED

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2309
Product Specification Section
Diodes Incorporated DMN65D8LDWQ-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 6Ω
Rated Power Dissipation: 0.3W
Qg Gate Charge: 0.87nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180mA
Turn-on Delay Time: 3.3ns
Turn-off Delay Time: 12ns
Rise Time: 3.2ns
Fall Time: 6.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 22pF
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$216.00
USD
Quantity
Unit Price
3,000
$0.072
9,000
$0.0702
15,000
$0.0694
45,000
$0.0677
75,000+
$0.0662
Product Variant Information section