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Diodes Incorporated | DMN67D8L-7

Manufacturer Part #

DMN67D8L-7

Single N-Channel 60 V 7.5 Ohm 821 nC 570 W Silicon Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN67D8L-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.5Ω
Rated Power Dissipation: 570W
Qg Gate Charge: 821nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 210mA
Turn-on Delay Time: 2.8ns
Turn-off Delay Time: 7.6ns
Rise Time: 3ns
Fall Time: 5.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 1mm
Length: 3mm
Input Capacitance: 22pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$63.30
USD
Quantity
Unit Price
3,000
$0.0211
12,000
$0.0205
45,000
$0.02
90,000
$0.0197
225,000+
$0.019
Product Variant Information section