
Manufacturer Part #
FDC6401N
Dual N-Channel 20 V 70 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6
Product Specification Section
onsemi FDC6401N - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi FDC6401N - Technical Attributes
Attributes Table
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 70mΩ |
Rated Power Dissipation: | 0.7|W |
Qg Gate Charge: | 4.6nC |
Package Style: | SSOT-6 |
Mounting Method: | Surface Mount |
Features & Applications
The FDC6401N is a 20 V 3.0 A, 2.5 V specified PowerTrench Dual N- Channel Mosfet available in a SSOT-6 Package .
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Product Features:
- 3.0 A, 20 V
- RDS(ON) = 70 mΩ @ VGS = 4.5 V
- RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremelylow RDS(on)
- High power and current handling capability
Applications:
- AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
- External AC-DC Merchant Power Supply - Wireless Communications
- Wireless LAN Card & Broadband Access
- Military & Civil Aerospace
- Routers & LAN Switches
- Medical Electronics/Devices
Pricing Section
Global Stock:
75,000
USA:
75,000
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
3,000
$0.255
9,000
$0.25
15,000+
$0.245
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SSOT-6
Mounting Method:
Surface Mount