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onsemi | FDS6679AZ

Manufacturer Part #

FDS6679AZ

P-Channel 30 V 9.3 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
onsemi FDS6679AZ - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 9.3mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 68nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The FDS6679AZ is a 30 V 9 mΩ P-Channel MOSFET is producted using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Features:

  • Max rDS(on) = 9.3 mΩat VGS = -10 V, ID = -13 A
  • Max rDS(on) = 14.8 mΩ at VGS = -4.5 V, ID = -11 A
  • Extended VGS range (-25 V) for battery applications
  • HBM ESD protection level of 6 kV typical (note 3)
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handing capability
  • High power and current handing capability

 Applications:

  • Power Management 
  • Load switching applications
  • Notebook Computers
  • Portable Battery Packs
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$725.00
USD
Quantity
Unit Price
2,500
$0.29
5,000
$0.285
12,500
$0.28
25,000+
$0.275
Product Variant Information section