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  6. FQB19N20LTM

onsemi | FQB19N20LTM

Manufacturer Part #

FQB19N20LTM

N-Channel 200 V 0.14 Ohm Surface Mount Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2514
Product Specification Section
onsemi FQB19N20LTM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 140mΩ
Rated Power Dissipation: 3.13|W
Qg Gate Charge: 27nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB19N20LTM is a 200 V 0.14 Ω N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 19.0 A, 200 V
  • RDS(on) = 0.17 Ω@VGS = 10 V
  • Low gate charge (typical 40.5 nC)
  • Low Crss (typical 85 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS Compliant

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply
  • Motor control
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
2
Factory Lead Time:
7 Weeks
Minimum Order:
1600
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,216.00
USD
Quantity
Unit Price
800
$0.77
1,600
$0.76
3,200
$0.75
4,000
$0.745
12,000+
$0.725
Product Variant Information section