Référence fabricant
HUF75339P3
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2227 | ||||||||||
onsemi HUF75339P3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi HUF75339P3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.012Ω |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 110nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
The HUF75339P3 is a N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.
Features:
- 75 A, 55 V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, ¡°Guidelines for Soldering Surface Mount Components to PC Boards¡±
Applications:
- TBA
Emballages disponibles
Qté d'emballage(s) :
800 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount