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Manufacturer Part #

IPB013N06NF2SATMA1

IPB013N06NF2S Series 60 V 198 A 1.3 mOhm Single N-Channel MOSFET - TO-263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IPB013N06NF2SATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.3mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 203nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 26ns
Turn-off Delay Time: 69ns
Rise Time: 34ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Input Capacitance: 13800pF
Series: StrongIRFET 2
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,568.00
USD
Quantity
Unit Price
800
$1.96
1,600
$1.95
2,400
$1.94
3,200
$1.93
4,000+
$1.91