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Manufacturer Part #

IPB80N06S2L06ATMA2

Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB80N06S2L06ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 114nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 60ns
Rise Time: 21ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 3800pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$6,100.00
USD
Quantity
Web Price
1,000+
$6.10
Product Variant Information section