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Infineon | IPD60R360P7SAUMA1

Manufacturer Part #

IPD60R360P7SAUMA1

Single N-Channel 650V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2515
Product Specification Section
Infineon IPD60R360P7SAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.360Ω
Rated Power Dissipation: 41W
Qg Gate Charge: 13C
Drain Current: 10µA
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 7ns
Fall Time: 10ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 555pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$762.50
USD
Quantity
Unit Price
2,500
$0.305
5,000
$0.30
12,500+
$0.295
Product Variant Information section