text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPD60R385CPATMA1

Infineon | IPD60R385CPATMA1

Manufacturer Part #

IPD60R385CPATMA1

600V, 9A, 0.385Ohms, PG-TO252 Package, N-Channel Mosfet

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R385CPATMA1 - Technical Attributes
Attributes Table
Product Status: Not Recommended for New Designs
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 385mΩ
Rated Power Dissipation: 83W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 790pF
Series: CoolMOS CP
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,412.50
USD
Quantity
Unit Price
2,500
$0.965
5,000
$0.95
7,500+
$0.94
Product Variant Information section