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Manufacturer Part #

IPD90N03S4L02ATMA1

Single N-Channel 30 V 2.2 mOhm 110 nC OptiMOS™ Power Mosfet - TO-252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD90N03S4L02ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.2mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 110nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
212,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,100.00
USD
Quantity
Unit Price
2,500
$0.84
5,000
$0.83
7,500+
$0.82
Product Variant Information section