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Manufacturer Part #

IPD90N03S4L03ATMA1

IPD90N03S4L Series 30 V 3.3 mOhm 90 A OptiMOS®-T2 Power-Transistor-PG-TO252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2343
Product Specification Section
Infineon IPD90N03S4L03ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 94W
Qg Gate Charge: 60nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 90A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 37ns
Rise Time: 6ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 4000pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,762.50
USD
Quantity
Unit Price
2,500
$0.705
5,000
$0.695
7,500
$0.69
10,000+
$0.685
Product Variant Information section