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Infineon | IPG20N10S4L35ATMA1

Manufacturer Part #

IPG20N10S4L35ATMA1

Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPG20N10S4L35ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 43W
Qg Gate Charge: 13.4nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 20A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 18ns
Rise Time: 2ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 850pF
Series: OptiMOS-T2
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,925.00
USD
Quantity
Unit Price
5,000
$0.585
10,000+
$0.575
Product Variant Information section