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Infineon | IPN60R2K1CEATMA1

Manufacturer Part #

IPN60R2K1CEATMA1

Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN60R2K1CEATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2.1Ω
Rated Power Dissipation: 5W
Qg Gate Charge: 6.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.7A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 30ns
Rise Time: 7ns
Fall Time: 50ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Height - Max: 1.7mm
Length: 6.7mm
Input Capacitance: 140pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$507.00
USD
Quantity
Unit Price
3,000
$0.169
6,000
$0.167
12,000
$0.165
45,000+
$0.161
Product Variant Information section