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Manufacturer Part #
IPT012N08N5ATMA1
Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS™ Power Mosfet - HSOF-8-1
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2433 | ||||||||||
Product Specification Section
Infineon IPT012N08N5ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
01/13/2023 Details and Download
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPT012N08N5ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipt012n08n5atma1-infineon-3173897
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPT012N08N5ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipt012n08n5atma1-infineon-3173897
Infineon IPT012N08N5ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 1.2mΩ |
| Rated Power Dissipation: | 375|W |
| Qg Gate Charge: | 178nC |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
2,000+
$2.50
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount