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Infineon Technologies | IRF100B202

Manufacturer Part #

IRF100B202

IRF100B202 Single N-Channel 100 V 8.6 mOhm HEXFET Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF100B202 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8.6mΩ
Rated Power Dissipation: 221W
Qg Gate Charge: 77nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 97A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 55ns
Rise Time: 56ns
Fall Time: 58ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 4476pF
Series: StrongIRFET
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
3000
Multiple Of:
50
Total
$7,980.00
USD
Quantity
Unit Price
50
$2.80
200
$2.76
500
$2.73
1,250
$2.70
2,000+
$2.66
Product Variant Information section