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Manufacturer Part #

IRF3205STRLPBF

Single N-Channel 55V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF3205STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 200W
Qg Gate Charge: 146nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 50ns
Rise Time: 101ns
Fall Time: 65ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 3247pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$584.00
USD
Quantity
Unit Price
800
$0.73
1,600
$0.72
3,200
$0.715
4,000
$0.71
12,000+
$0.69
Product Variant Information section