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Infineon | IRF40B207

Manufacturer Part #

IRF40B207

Single N-Channel 40 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF40B207 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 83W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 95A
Turn-on Delay Time: 7.8ns
Turn-off Delay Time: 25ns
Rise Time: 35ns
Fall Time: 19ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 2110pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
50
Total
$1,215.00
USD
Quantity
Unit Price
50
$0.43
250
$0.42
1,250
$0.405
3,750
$0.40
10,000+
$0.385
Product Variant Information section