
Manufacturer Part #
IRF4905STRLPBF
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
Infineon IRF4905STRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
- Updated information marked in BLUE TYPE- Original PCN N° 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: • United States = Infineon Technologies Temecula• Taiwan = EPISIL Technologies Inc.• Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Part Status:
Infineon IRF4905STRLPBF - Technical Attributes
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.02Ω |
Rated Power Dissipation: | 3.8|W |
Qg Gate Charge: | 180nC |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Features & Applications
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount