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Infineon | IRF5801TRPBF

Manufacturer Part #

IRF5801TRPBF

Single N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET® Power Mosfet - SC-74

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF5801TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 2.2Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 3.9nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 0.6A
Turn-on Delay Time: 6.5ns
Turn-off Delay Time: 8.8ns
Rise Time: 8ns
Fall Time: 19ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5.5V
Technology: Si
Height - Max: 1mm
Length: 3.1mm
Input Capacitance: 88pF
Package Style:  SC-74 (TSOP-6)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$381.00
USD
Quantity
Unit Price
3,000
$0.127
9,000
$0.125
30,000
$0.123
45,000+
$0.121
Product Variant Information section