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Manufacturer Part #

IRFG110

Single N-Channel 100 V 1.4 W 15 nC Hexfet Power Mosfet Through Hole - MO-036AB

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFG110 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.7Ω
Rated Power Dissipation: 1.4|W
Qg Gate Charge: 15nC
Package Style:  MO-036AB
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
100
Multiple Of:
1
Total
$12,240.00
USD
Quantity
Unit Price
1
$128.52
3
$126.40
4
$125.85
10
$124.12
15+
$122.40
Product Variant Information section