text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRFP4668PBF

Infineon | IRFP4668PBF

Manufacturer Part #

IRFP4668PBF

Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFP4668PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 161nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 130A
Turn-on Delay Time: 41ns
Turn-off Delay Time: 64ns
Rise Time: 105ns
Fall Time: 74ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 10720pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
400
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
400
Multiple Of:
25
Total
$908.00
USD
Quantity
Unit Price
25
$2.34
100
$2.31
375
$2.27
1,000
$2.25
2,500+
$2.21
Product Variant Information section