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Infineon | IRFP4668PBF

Manufacturer Part #

IRFP4668PBF

Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFP4668PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 161nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 130A
Turn-on Delay Time: 41ns
Turn-off Delay Time: 64ns
Rise Time: 105ns
Fall Time: 74ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 10720pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
400
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
400
Multiple Of:
25
Total
$1,080.00
USD
Quantity
Unit Price
25
$2.79
100
$2.74
375
$2.70
750
$2.68
1,875+
$2.63
Product Variant Information section