Manufacturer Part #
IRFR3910TRLPBF
Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2221 | ||||||||||
Infineon IRFR3910TRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRFR3910TRLPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.115Ω |
| Rated Power Dissipation: | 79|W |
| Qg Gate Charge: | 44nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 16A |
| Turn-on Delay Time: | 6.4ns |
| Turn-off Delay Time: | 37ns |
| Rise Time: | 27ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 640pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount