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Référence fabricant
IRLML2502TRPBF
N-Channel 20 V 0.045 Ohm Surface Mount HEXFET Power Mosfet - Micro3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-23 (SC-59,TO-236) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2324 | ||||||||||
Infineon IRLML2502TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLML2502TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlml2502trpbf-infineon-4227377
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLML2502TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlml2502trpbf-infineon-4227377
Infineon IRLML2502TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.08Ω |
| Rated Power Dissipation: | 1.25W |
| Qg Gate Charge: | 12nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 4.2A |
| Turn-on Delay Time: | 7.5ns |
| Turn-off Delay Time: | 54ns |
| Rise Time: | 10ns |
| Fall Time: | 26ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.2V |
| Technology: | Si |
| Height - Max: | 1.12mm |
| Length: | 3.04mm |
| Input Capacitance: | 740pF |
| Style d'emballage : | SOT-23 (SC-59,TO-236) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRLML2502TRPBF is a 20 V single N-Channel Hexfet Power Mosfet, available in low profile Micro-3 package.
It utilizes a advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in many applications.
Features:
- Ultra Low On-Resistance
- N-Channel MOSFET
- SOT-23 Footprint
- Low Profile (<1.1mm)
- Available in Tape and Reel
- Fast Switching
- Lead-Free
- Halogen-Free
Applications:
- Battery
- Load Management
- Portable electronics
- PCMCIA cards
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount