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Manufacturer Part #

IRLR2905TRPBF

Single N-Channel 55 V 40 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2221
Product Specification Section
Infineon IRLR2905TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 42A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 26ns
Rise Time: 84ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Advanced Process Technology
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1700pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
28,000
USA:
20,000
Germany (Online Only):
8,000
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,370.00
USD
Quantity
Web Price
2,000
$0.685
4,000
$0.67
6,000
$0.665
8,000+
$0.65
Product Variant Information section