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Manufacturer Part #

IRLR2905ZTRPBF

Single N-Channel 55 V 22.5 mOhm 35 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLR2905ZTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 13.5mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 60A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 24ns
Rise Time: 130ns
Fall Time: 33ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Advanced Process Technology
Input Capacitance: 1570pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$580.00
USD
Quantity
Unit Price
2,000
$0.29
8,000
$0.285
30,000+
$0.275
Product Variant Information section