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NXP | MRFE6VP100HR5

Manufacturer Part #

MRFE6VP100HR5

MRFE6VP100H Series 50 V 512 MHz Broadband RF Power LDMOS Transistor - NI-780-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP MRFE6VP100HR5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 133V
Gate-Source Voltage-Max [Vgss]: 10V
Operating Temp Range: -40°C to +225°C
Gate Source Threshold: 2.1V
Input Capacitance: 73.6pF
Mounting Method: Screw Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
N/A
Minimum Order:
100
Multiple Of:
50
Total
$17,897.00
USD
Quantity
Unit Price
50+
$178.97
Product Variant Information section