
Manufacturer Part #
MRFE6VP100HR5
MRFE6VP100H Series 50 V 512 MHz Broadband RF Power LDMOS Transistor - NI-780-4
Product Specification Section
NXP MRFE6VP100HR5 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
NXP MRFE6VP100HR5 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 133V |
Gate-Source Voltage-Max [Vgss]: | 10V |
Operating Temp Range: | -40°C to +225°C |
Gate Source Threshold: | 2.1V |
Input Capacitance: | 73.6pF |
Mounting Method: | Screw Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
50+
$120.31
Product Variant Information section
Available Packaging
Package Qty:
50 per Reel
Mounting Method:
Screw Mount