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Manufacturer Part #

MRFE6VP5600HR5

MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Date Code:
Product Specification Section
NXP MRFE6VP5600HR5 - Technical Attributes
Attributes Table
Fet Type: RF Fet
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 130V
Rated Power Dissipation: 1667W
Gate-Source Voltage-Max [Vgss]: 10V
Gate Source Threshold: 2.2V
Input Capacitance: 342pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
10 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$10,279.50
USD
Quantity
Unit Price
50+
$205.59