NDS0610 in Reel by onsemi | Mosfets | Future Electronics
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onsemi | NDS0610

Manufacturer Part #

NDS0610

P-Channel 60 V 10 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
onsemi NDS0610 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 10Ω
Rated Power Dissipation: 0.36|W
Qg Gate Charge: 1.8nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The NDS0610 is a Part of NDS Series P-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

They can be used, with a minimum of effort, in most applications requiring up to 120 mA DC and can deliver current up to 1 A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features:

  • 0.12A, -60V
  • RDS(ON) = 10 W @ VGS = -10 V
  • RDS(ON) = 20W @ VGS = -4.5 V
  • Voltage controlled p-channel small signal switch
  • High density cell design for low RDS(ON)
  • High saturation current

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Read More...
Pricing Section
Global Stock:
81,000
USA:
81,000
On Order:Order inventroy details
180,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$146.40
USD
Quantity
Unit Price
3,000
$0.0488
9,000
$0.0476
15,000
$0.047
30,000
$0.0463
60,000+
$0.0451
Product Variant Information section
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