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Manufacturer Part #

NDS352AP

P-Channel 30 V 0.5 Ω Surface Mount Field Effect Transistor - SSOT-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 300mΩ
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 3nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications
The NDS352AP is a Part of NDS Series P-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • -0.9 A, -30 V
  • RDS(ON) = 0.5 Ω @ VGS = -4.5 V
  • RDS(ON) = 0.3 Ω @ VGS = -10 V
  • Industry standard outline SOT-23 surface mount package using proprietary Super SOT-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(on)
  • Exceptional on-resistance and maximum DC current capability
    Pricing Section
    Stock:
    99,000
    Minimum Order:
    3,000
    Multiple Of:
    3,000
    138,000
    Factory Stock:Factory Stock:
    0
    Factory Lead Time:
    N/A
    Total
    $248.40
    USD
    Quantity
    Web Price
    3,000
    $0.0828
    9,000
    $0.0688
    15,000
    $0.0681
    30,000
    $0.0671
    60,000+
    $0.0662