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Manufacturer Part #

NDT3055

N-Channel 60 V 0.1 Ω SMT Enhancement Mode Field Effect Transistor SOT-223

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NDT3055 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 15nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
$Features & Applications
The NDT3055 Part Number is a N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features:

  • 4 A, 60 V
  • RDS(ON) = 0.100 Ω @ VGS = 10 V
  • High density cell design for extremely lowRDS(ON).
  • High power and current handling capability in a widely used surface mount package.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Global Stock:
0
USA:
0
120,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
Total
$6,920.00
USD
Quantity
Web Price
4,000+
$1.73
Product Variant Information section