
Manufacturer Part #
PMDXB550UNEZ
PMDX550UNEZ Series 30V 670 mOhm 285 mW Dual N-Channel TrenchMOS FET - DFN1010B-6
Product Specification Section
Nexperia PMDXB550UNEZ - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia PMDXB550UNEZ - Technical Attributes
Attributes Table
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 670mΩ |
Rated Power Dissipation: | 285mW |
Qg Gate Charge: | 0.6nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 590mA |
Turn-on Delay Time: | 4ns |
Turn-off Delay Time: | 12ns |
Rise Time: | 7ns |
Fall Time: | 3ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.7V |
Input Capacitance: | 30.3pF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
5,000
$0.0939
10,000
$0.0923
15,000
$0.0914
20,000
$0.0908
25,000+
$0.0888
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount