PMDXB550UNEZ in Reel by Nexperia | Mosfets | Future Electronics
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Manufacturer Part #

PMDXB550UNEZ

PMDX550UNEZ Series 30V 670 mOhm 285 mW Dual N-Channel TrenchMOS FET - DFN1010B-6

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia PMDXB550UNEZ - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 670mΩ
Rated Power Dissipation: 285mW
Qg Gate Charge: 0.6nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 590mA
Turn-on Delay Time: 4ns
Turn-off Delay Time: 12ns
Rise Time: 7ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.7V
Input Capacitance: 30.3pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
8 Weeks
Minimum Order:
10000
Multiple Of:
5000
Total
$923.00
USD
Quantity
Unit Price
5,000
$0.0939
10,000
$0.0923
15,000
$0.0914
20,000
$0.0908
25,000+
$0.0888
Product Variant Information section