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Manufacturer Part #

SCT3060ALGC11

SCT3060AL Series 650 V 39 A 78 mOhm N-Channel SiC Power Mosfet - TO-247N

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Date Code:
Product Specification Section
ROHM SCT3060ALGC11 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 78mΩ
Rated Power Dissipation: 165|W
Qg Gate Charge: 58nC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$11.88
USD
Quantity
Web Price
1
$11.88
5
$11.73
25
$11.58
75
$11.48
200+
$11.31