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Manufacturer Part #

SI2302CDS-T1-GE3

Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23

Product Specification Section
Vishay SI2302CDS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.057Ω
Rated Power Dissipation: 0.71|W
Qg Gate Charge: 5.5nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The SI2302CDS-T1-GE3 is a N-Channel 20 V (D-S) MOSFET. It is available in a TO-236 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • Compliant to RoHS Directive 2002/95/EC

Applications:

  • Load Switching for Portable Devices
  • DC/DC Converter
Pricing Section
Global Stock:
438
USA:
438
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.49
USD
Quantity
Web Price
1
$0.49
15
$0.41
75
$0.36
300
$0.315
1,500+
$0.265