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Manufacturer Part #

SI2369DS-T1-GE3

Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
Vishay SI2369DS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 1.25W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -5.4A
Turn-on Delay Time: 42ns
Turn-off Delay Time: 45ns
Rise Time: 24ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2.5V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 1295pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$780.00
USD
Quantity
Unit Price
3,000
$0.13
9,000
$0.128
12,000
$0.127
30,000
$0.126
45,000+
$0.124
Product Variant Information section