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Manufacturer Part #

SI3129DV-T1-GE3

-80V, -5.4A, 0.0827ohm, TrenchFET power MOSFET, P-Channel, TSOP-6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI3129DV-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 82.7mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.8A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 25ns
Rise Time: 8ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 805pF
Series: TrenchFET
Package Style:  TSOP-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
6,000
Factory Lead Time:
31 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$765.00
USD
Quantity
Unit Price
3,000
$0.255
9,000
$0.25
15,000+
$0.245
Product Variant Information section