text.skipToContent text.skipToNavigation

Manufacturer Part #

SI4425FDY-T1-GE3

Single P-Channel 30 V 9.5 mOhm Surface Mount TrenchFET® Power Mosfet - SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI4425FDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 9.5mΩ
Rated Power Dissipation: 2.3W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.7A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 6ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 1620pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
5000
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,225.00
USD
Quantity
Unit Price
2,500
$0.245
10,000
$0.24
37,500+
$0.235
Product Variant Information section