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Manufacturer Part #

SI8823EDB-T2-E1

P-Channel 20 V 95 mOhm 900 mW TrenchFET Gen III Mosfet MICRO FOOT 0.8 x 0.8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI8823EDB-T2-E1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 95mΩ
Rated Power Dissipation: 0.5W
Qg Gate Charge: 11nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.9A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 75ns
Rise Time: 20ns
Fall Time: 35ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.8V
Input Capacitance: 580pF
Package Style:  MICRO-FOOT
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
30,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$312.00
USD
Quantity
Unit Price
3,000
$0.104
9,000
$0.101
15,000
$0.0999
30,000
$0.0984
60,000+
$0.0959
Product Variant Information section