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Manufacturer Part #

SIDR668ADP-T1-RE3

MOSFET N-CH 100V

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIDR668ADP-T1-RE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 54nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23.3A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 36ns
Rise Time: 18ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 3750pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
3,000
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
Total
$6,900.00
USD
Quantity
Unit Price
3,000
$1.16
6,000+
$1.15
Product Variant Information section