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Manufacturer Part #
SIHB068N60EF-GE3
EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263)
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Bag Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHB068N60EF-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
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Vishay SIHB068N60EF-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 68mΩ |
| Rated Power Dissipation: | 250W |
| Qg Gate Charge: | 51nC |
| Gate-Source Voltage-Max [Vgss]: | 5V |
| Drain Current: | 41A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 53ns |
| Rise Time: | 55ns |
| Fall Time: | 35ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Input Capacitance: | 2628pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
1
$3.09
25
$3.02
100
$2.98
300
$2.94
1,250+
$2.85
Product Variant Information section
Available Packaging
Package Qty:
50 per Bag
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount